Telecom Single Photon Detector

Parsa single photon avalanche photodiode (SPAD) utilizes InGaAs avalanche photodiodes to resolve telecom single photons. This device has many applications, including quantum cryptography, long-range LIDAR, non-destructive bio-imaging, detection of very dilute gases, and Non-line-of-sight imaging.

  • 1100-1600 nm
  • 10% , 25% QE
  • 1-80 us Dead Time
  • <7 min Cooling Time
  • 300 ps Jitter
  • LCD Interface

The Parsa company’s single-photon detector can detect single photons at telecommunication wavelengths in both free-running and gated operational modes. This detector operates in two modes with detection efficiencies of 10% and 25%. The user can configure the device as needed for their tests through the device’s software or via the touch control panel on the device. The dark count rate of the device is less than one kilohertz. The device’s operational suite enables its use in various applications such as quantum communications, long-range imaging, and non-destructive imaging in both free-space and fiber-optic setups.

Single-photon detectors around the world have been developed for two wavelength ranges: visible (silicon detectors) and telecommunication wavelengths (InGaAs detectors). Silicon-based single-photon detectors are regarded as mid-range products in today’s market, with relatively easy access and support. However, they cannot be used for telecommunication wavelengths. In contrast, InGaAs single-photon detectors, while critical for important applications, face significant challenges in terms of accessibility, support, and cost. In response to this, Parsa Company has focused on developing and mastering the technology for single-photon detectors at telecommunication wavelengths. We have designed and produced these detectors with a broad range of features, making them versatile for various applications as a strategic system.

  • Quantum Simulations
  • Quantum Cryptography
  • Single molecule Detection
  • Clinical tomography
  • Non-Line of sight imaging
  • Long distance measurement
  • Quantum Random number Generator
  • Lidar
  • Radioactive monitoring
Quantum Efficiency10%, 25%Timing Jitter (25%)300 ps
Dead Time Range1-80 & 0.01-1 usCooling Time<7 min
DCR (10%, 10 us)<1kHzWavelength Range1,100-1,600 nm
Operation Temperature5-30 °COptical ConnectorFC fiber/Free space
Humidity60%Dimensions220*217*180 mm
Output Pulse Duration15 nsWeight2.5
Max Gate100 MHzCustomization OptionYes

Avalanche Photodiodes (APDs) are semiconductor devices widely used in optical communication systems, LiDAR, spectroscopy, and imaging due to their high sensitivity and fast response times. They operate by converting light into an electrical signal, using the principle of avalanche multiplication, which significantly amplifies weak signals. Below are key operational insights into APDs:

Principle of Operation
APDs operate by the photoelectric effect, where incident photons generate electron-hole pairs. Under a high reverse-bias voltage, these carriers are accelerated, triggering an avalanche effect that results in the multiplication of carriers. This internal gain mechanism increases the sensitivity of the APD, making it suitable for detecting low-intensity light.


Bias Voltage Requirements
APDs require a high reverse-bias voltage, typically ranging from 100 to 400 V, to achieve avalanche multiplication. This high voltage ensures that the device operates in the avalanche region, where the electron multiplication occurs. Precise control over the bias voltage is crucial, as small deviations can lead to excessive noise or device failure.

  • Optimal bias voltage: A key parameter that impacts the gain and noise performance.
  • Breakdown voltage: The minimum voltage at which the avalanche multiplication starts.

Gain and Sensitivity
APDs offer high gain (multiplication factor), usually in the range of 10 to 1000. The gain is tunable by adjusting the bias voltage. Higher gains increase the sensitivity of the APD, enabling it to detect faint signals, but this comes at the cost of increased noise and higher ope

Temperature Dependence
The performance of APDs is highly temperature dependent. The breakdown voltage increases with temperature, and thermal noise becomes more prominent at elevated temperatures. As such, APDs are often operated with temperature stabilization mechanisms, such as thermoelectric coolers, to maintain optimal performance.

  • Thermal management: Critical to ensure stable gain and noise characteristics.
  • Temperature compensation: Necessary for consistent operation in varying environmental conditions.

Noise Characteristics
APDs exhibit higher noise compared to PIN photodiodes due to the avalanche multiplication process. This noise primarily stems from the stochastic nature of the avalanche process, often referred to as avalanche noise. Excess noise can be reduced by operating the APD at lower gains, but this also reduces sensitivity.

  • Shot noise: Dominates at low light levels.
  • Avalanche noise: Becomes significant at higher gains, impacting signal integrity.

Speed and Bandwidth
APDs are faster than many other types of photodiodes due to their high carrier velocities in the avalanche region. They offer bandwidths of several gigahertz (GHz), making them suitable for high-speed optical communication systems.

  • Fast response time: Ensures high data transmission rates in optical networks.
  • High bandwidth: Critical for applications such as fiber-optic communication and LiDAR.

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